S29GL512N11FAI020

Product Summary

The S29GL512N11FAI020 is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N11FAI020 is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers. Access times as fast as 90 ns is available. Note that each access time has a specific operating voltage range (VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide and the Ordering Information. The S29GL512N11FAI020 is offered in a 56-pin TSOP or 64-ball Fortified BGA package. The device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Parametrics

S29GL512N11FAI020 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: -0.5 V to +4.0 V; VIO: –0.5 V to +4.0 V; A9, OE#, and ACC: -0.5 V to +12.5 V; All other pins: -0.5 V to VCC + 0.5V; Output Short Circuit Current: 200 mA.

Features

S29GL512N11FAI020 features: (1)Program Suspend and Resume: read other sectors before programming operation is completed; (2)Erase Suspend and Resume: read/program other sectors before an erase operation is completed; (3)Data# polling and toggle bits provide status; (4)Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash; (5)devices; (6)Advanced Sector Protection; (7)WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings; (8)Hardware reset input (RESET#) resets device; (9)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.

Diagrams