Product Summary

The M29F200BB-70M1 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCC supply.

Parametrics

M29F200BB-70M1 absolute maximum ratings: (1)Temperature Under Bias: –50 to 125 °C; (2)TSTG Storage Temperature: –65 to 150 °C; (3); (4)Input or Output Voltages: –0.6 to 7 V; (5)VCC Supply Voltage: –0.6 to 7 V.

Features

M29F200BB-70M1 features: (1)5v ± 10% supplyvoltagefor program, erase and read operations; (2)fastaccess time: 70ns; (3)fastprogramming time: 10ms typical; (4)program/erase controller (p/e.c.).

Diagrams

M29F200BB-70M1 block diagram

M29F002BB70P6
M29F002BB70P6

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Flash 2M (256Kx8) 70ns

Data Sheet

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M29F002BB90P6

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Data Sheet

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M29F016D70M6
M29F016D70M6

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Data Sheet

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M29F016B90M1
M29F016B90M1

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Data Sheet

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M29F032D55N6
M29F032D55N6

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Data Sheet

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M29F016D70N1
M29F016D70N1

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Flash 16M (2Mx8) 70ns

Data Sheet

Negotiable