(China (Mainland))
Product Summary
The M29F200BB-70M1 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCC supply.
Parametrics
M29F200BB-70M1 absolute maximum ratings: (1)Temperature Under Bias: –50 to 125 °C; (2)TSTG Storage Temperature: –65 to 150 °C; (3); (4)Input or Output Voltages: –0.6 to 7 V; (5)VCC Supply Voltage: –0.6 to 7 V.
Features
M29F200BB-70M1 features: (1)5v ± 10% supplyvoltagefor program, erase and read operations; (2)fastaccess time: 70ns; (3)fastprogramming time: 10ms typical; (4)program/erase controller (p/e.c.).
Diagrams
 |
 M29F002B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29F002BB |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
M29F002BB70K1 |
STMicroelectronics |
Flash 2M (256Kx8) 70ns |
Data Sheet |
Negotiable |
|
||||
|
M29F002BB70K6 |
STMicroelectronics |
Flash 2M (256Kx8) 70ns |
Data Sheet |
Negotiable |
|
||||
|
M29F002BB70K6E |
|
IC FLASH 2MBIT 70NS 32PLCC |
Data Sheet |
Negotiable |
|
||||
|
M29F002BB70N1 |
STMicroelectronics |
Flash 2M (256Kx8) 70ns |
Data Sheet |
Negotiable |
|
||||
